Three plants of the third generation semiconductor project in Hunan San 'an have been capped one aft
Recently, the hunan three Ann semiconductor project (phase I) bid Ⅰ splash degree cap factory implementation main body structure. This is another important moment for the project construction following the successful completion of the main structure capping of the M3 device packaging plant and the M4 silicon carbide long crystal plant.
According to the introduction, the spatter plant is located in the southeast corner of the project, covers an area of 5500 square meters, the total construction area of about 6000 square meters, the main role of the plant is to protect the chip by spatter plating technology on each surface of the chip splashing film. The single building was excavated on October 5, the construction of positive and negative zero structure was completed on December 2, and the last piece of roof pouring was completed on December 25.
M4 silicon carbide long-crystal plant covers an area of 8,000 square meters, with a building area of 12,000 square meters, the fourth largest single building area among all the monomers. The building structure is reinforced concrete structure. The monomer was officially ground breaking on September 3, and the roof of the main structure was successfully completed on December 24. M4 silicon carbide long crystal plant structure ceiling has opened an important link of the whole industry chain of Hunan San 'an Semiconductor Project.
The M3 device packaging plant covers an area of 11,000 square meters, and the building area is 33,000 square meters, which is the highest monomer with the largest number of structural layers in the whole project. Since the construction of the monomer started on September 1, the roof capping was completed on December 20, 7 days earlier than the original plan.
It is understood that the realization of the structural ceiling of the three monomers marks the end of the main construction of the second phase of the whole project. The subsequent wastewater station, M1A long crystal and M2B chip plant will be completed in the middle and late January 2021, when the whole industry chain of the semiconductor project will be fully connected.